1. Zhukov, V.A., Titov, A.I., Bagraev, N.T., and Zhurkin, E.E., Delta-Doping of Monocrystalline Semiconductors by Al and Sb Implantation Using FIB Resistless Lithography, Mikroelektronika, 2004, vol. 33, no.6, pp. 445?458.
2. Yanagisawa, J., Goto, T., et al., Carrier Profile of the Si-Doped Layer in GaAs Fabricated by Low-Energy Focused Ion Beam/Molecular Beam Epitaxy Combined System, J. Vac. Sci. Technol., B, 1999, vol. 17, no.6, pp.3072?3074.
3. Gossmann, H.-J. and Poate, J.M., The Physics of Semiconductors, World Scientific, 1996, vol. 4, p. 2569.
4. Bagraev, N.T., Bouravleuv, A.D., Klyachkin, L.E., Malyarenko, A.M., Gehlhoff, W., Ivanov, V.K., and Shelykh, I.A., Fiz. Tekh. Poluprovodn. (St. Petersburg), 2002, vol. 36, issue4, pp. 462?483.
5. Zhurkin, E.E. and Kolesnikov, A.S., Nucl. Instrum. Methods Phys. Res., Sect. B, 2003, vol. 202, p. 269.