Experimental Determination of the Intraband Relaxation Time in Strained Quantum Well Lasers
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Publisher
Springer US
Link
http://link.springer.com/content/pdf/10.1007/978-1-4613-0401-2_135.pdf
Reference5 articles.
1. M. Willatzen, T. Takahashi, and Y. Arakawa, Nonlinear gain effects due to carrier heating and spectral holeburning in strained-quantum well lasers, IEEE Photon. Technol. Lett., 4:682 (1992).
2. G.P. Agrawal, Spectral hole-burning and gain saturation in semiconductor lasers: Strong-signal theory, IEEE J. Quantum Electron. 23:860 (1987).
3. G.P. Agrawal, G.P. Agrawal, Modulation bandwidth of high-power single-mode semiconductor lasers: Effect of intraband gain saturation, Appl. Phys. Lett. 57:1 (1990).
4. Theoretical analysis of gain saturation coefficients in InGaAs/A1GaAs strained layer quantum well lasers, Appl. Phys. Lett. 61:2147 (1992).
5. in InGaAs/AlGaAs strained layer quantum well lasers, Appl. Phys. Lett. 61:2147 (1992).
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