1. N. Sano, M. Tomizawa, and A. Yoshii, Nonlocality of ionization phenomena under nonuniform electric fields: a full-band monte carlo approach, in: “Computer Aided Innovation of New Materials II,” M. Doyama, J. Kihara, M. Tanaka, and R. Yamamoto, ed., Elsevier, Amsterdam (1993).
2. See, for example, E. Cartier, M. V. Fischetti, E. A. Eklund, and F. R. McFeely, Impact ionization in silicon, Appl. Phys. Lett.62: 3339 (1993).
3. M. V. Fischetti and S. E. Laux, Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects, Phys. Rev. B38: 9721 (1988).
4. H. Shichijo, J. Y. Tang, J. Bude, and P. D. Yoder, Full band monte carlo program for electrons in siliconin“Monte Carlo Device Simulation: Full Band and Beyond,” K. Hess, ed., Kluwer Academic, Boston (1991).
5. T. Kunikiyo, M. Takenaka, Y. Kamakura, M. Yamaji, H. Mizuno, M. Morifuji, K. Taniguchi, and C. Hamaguchi, A monte carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact-ionization model, J. Appl. Phys.75: 297 (1994).