1. B.J. Baliga, “Gated Base Controlled Thyristor”, U.S. Patent Number 5,099,300, Filed June 14, 1990, Issued March 24, 1992.
2. B.J. Baliga, “Base Resistance Controlled Thyristor with Single-Polarity Turn-on and Turn-off Control”, U.S. Patent Number 5,198,687, Filed July 23, 1992, Issued March 30, 1993.
3. D.N. Pattanayak and B.J. Baliga, “Monolithically Integrated Insulated Gate Semiconductor Device”, U.S. Patent Number 5,198,687, Filed May 19, 1987, Issued July 11, 1989.
4. B.J. Baliga, “The MOS-Gated Emitter Switched Thyristor”, IEEE Electron Device Letters, Vol. 11, pp. 75–77, 1990.
5. B.J. Baliga, “The MOS-Gated Emitter Switched Thyristor”, IEEE International Symposium on Power Semiconductor Devices and ICs, Abstract 4.1.1, pp. 117–121, 1990.