X-Ray Double Crystal Diffractometer Investigations of Implanted Silicon: D+ and N+-Reference-Cited by-同舟云学术

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X-Ray Double Crystal Diffractometer Investigations of Implanted Silicon: D+ and N+

Published:1972 Issue: Volume: Page:504-515
ISSN:
Container-title:Advances in X-Ray Analysis
language:
Short-container-title:

Author:

teKaat E. H.,Schwuttke G. H.

Publisher

Springer US

Link

http://link.springer.com/content/pdf/10.1007/978-1-4613-9969-8_40.pdf

Reference12 articles.

1. G. H. Schwuttke, K. Brack, E. F. Gardner, and H. M. DeAngelis, in Radiation Effects in Semiconductors, ed. by F. L. Vook, Plenum Press, New York 1968, page 406.

2. G. H. Schwuttke and K. Brack, Trans. Met. Soc. AIME, 245, 475, (1969).

3. U. Bonse, M. Hart, and G. H. Schwuttke, Phys. Stat. Sol., 33, 361, (1969).

4. U. Bonse and M. Hart, Phys. Stat. Sol., 33, 351, (1969).

5. U. Bonse and E. Kappler, g. Naturforsch., 13a, 348, (1958).

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. X-ray diffraction investigations of ion-implanted semiconductor crystals;Physica Status Solidi (a);1996-07-16

2. Double-Crystal X-Ray Diffraction Studies of Si Ion-Implanted and Pulsed Laser-Annealed GaAs;Advances in X-Ray Analysis;1991

3. X-ray diffraction investigations of high energy α-particle damage in silicon;Physica Status Solidi (a);1981-11-16

4. Strain profiles in ion-doped silicon obtained from X-ray rocking curves;Physica Status Solidi (a);1980-08-16

5. Investigation of X-ray diffraction contrast asymmetries of the implanted region–nonimplanted region boundary;Physica Status Solidi (a);1973-11-16

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