The Effects of Electric Fields on the Epitaxial Growth of Gallium Arsenide-Reference-Cited by-同舟云学术

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The Effects of Electric Fields on the Epitaxial Growth of Gallium Arsenide

Published:1984 Issue: Volume: Page:344-349
ISSN:
Container-title:Рост Кристаллоь / Rost Kristallov / Growth of Crystals
language:
Short-container-title:

Author:

Korobov O. E.,Maslov V. N.,Nechaev V. V.

Publisher

Springer US

Link

http://link.springer.com/content/pdf/10.1007/978-1-4615-7116-2_53.pdf

Reference14 articles.

1. J. Tarui and J. Teshima, Electrochem. Soc., 110: 1167 (1963).

2. A. S. Lyutovich, V. V. Kharchenko, andB. M. Abdurakhmanov, In: Mechanism and Kinetics of Crystallization ( Abstracts) [in Russian], Minsk (1971), p. 131.

3. A. N. Palienko, D. A. Sechenov, and Yu. D. Chistyakov, Electronic Technology, Microelectronics Series, issue 8 [in Russian] (1971).

4. G. M. Ikonnikova, In: Mechanism and Kinetics of Crystallization ( Abstracts) [in Russian], Minsk (1971), p. 126.

5. K. L. Chopra and S. K. Bahl, J. Appl. Phys., 40: 10 (1969).

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