Internal Friction Study of Point Defects in Boron-Implanted Silicon-Reference-Cited by-同舟云学术

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Internal Friction Study of Point Defects in Boron-Implanted Silicon

Published:1973 Issue: Volume: Page:19-30
ISSN:
Container-title:Ion Implantation in Semiconductors and Other Materials
language:
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Author:

Tan S. I.,Berry B. S.,Frank W. F. J.

Publisher

Springer US

Link

http://link.springer.com/content/pdf/10.1007/978-1-4684-2064-7_3.pdf

Reference12 articles.

1. S. I. Tan, B. S. Berry and B. L. Crowder, Appl. Phys. Lett., 20 88 (1972).

2. A. S. Nowick and B. S. Berry, Anelastic Relaxation in Crystalline Solids, Academic Press, New York (1972).

3. A. S. Nowick and B. S. Berry, Anelastic Relaxation in Crystalline Solids, Academic Press, New York (1972), p. 52–57.

4. A. S. Nowick and B. S. Berry, Anelastic Relaxation in Crystalline Solids, Academic Press, New York (1972), p. 192.

5. A. S. Nowick and B. S. Berry, Anelastic Relaxation in Crystalline Solids, Academic Press, New York (1972) p. 284–288.

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