1. LB. Khaibullin, M. M. Zaripov, E. I. Shtyrkov, et al, “Annealing of ion-doped layers by laser irradiation,” All-Union Institute of Scientific and Technical Information (VINITI), deposited paper No. 2061 (1974).
2. A. G. Cullis, “Transient annealing of semiconductors by laser, electron beam and radiant heating techniques,” Rep. Prog. Phys., 48, 1155–1233 (1985).
3. E. N. Arutyunov, A. N. Vasil’ev, S. Yu. Karpov, et al, “Luminsecence properties of A3B5 semiconductors after laser treatment,” in: Nonequilibrium Processes in Semiconductors [in Russian], Nauka, Leningrad (1986), pp. 180–201.
4. S. Nojima, “Defects in GaAs induced by laser annealing,” J. Appl Phys., 52, 7445–7447 (1981).
5. B. J. Feldman and D. H. Lowndes, “Photoluminescence of pulsed laser irradiated n-and p-GaAs,”Appl Phys. Lett, 40, 59–61 (1982).