Indication for an Ionization Damage Process in Light Ion Irradiation Damage in Silicon-Reference-Cited by-同舟云学术

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Indication for an Ionization Damage Process in Light Ion Irradiation Damage in Silicon

Published:1975 Issue: Volume: Page:141-157
ISSN:
Container-title:Atomic Collisions in Solids
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Author:

Pabst H. J.,Palmer D. W.

Publisher

Springer US

Link

http://link.springer.com/content/pdf/10.1007/978-1-4684-3117-9_14

Reference27 articles.

1. Recent review: H. J. Stein in Radiation Effects in Semiconductors, Ed. J. W. Corbett, G. D. Watkins, Gordon and Breach, 1971; p. 125.

2. Recent review: G. D. Watkins in Radiation Damage and Defects in Semiconductors, Conference Series No. 16, The Institute of Physics, 1972; p. 228.

3. Recent review: F. L. Vook in Radiation Damage and Defects in Semiconductors; Conference Series No. 16, The Institute of Physics, 1972; p. 60.

4. Recent review: W. L. Brown in Radiation Damage and Defects in Semiconductors; Conference Series No. 16, The Institute of Physics, 1972; p. 416.

5. H. J. Pabst, Thesis, 1973, University of Sussex.

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1. Lattice Relaxation in a Hot Electron Plasma;physica status solidi (b);1992-04-01

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