Author:
Fortunelli A.,Desalvo A.,Salvetti O.,Albertazzi E.
Reference26 articles.
1. D. G. Allan, and J. D. Joannopoulos, Theory of electronic structure, in: “The physics of hydrogenated amorphous silicon”, J. D. Joannopoulos and G. Lukovsky, eds., Springer Verlag, Berlin, (1984), vol. 2.
2. A. C. Kenton, and M. W. Ribarsky, Ab initio calculations on hydrogen-bounded silicon clusters, Phys. Rev. B, 23:2897 (1981).
3. J. Robertson, Dopant states in a-Si:H. I. Tight-binding-model results, Phys. Rev. B, 28:4647(1983).
4. J. Robertson, Dopant states in a-Si:H. III. Triply coordinated boron, Phys. Rev. B, 28:4666 (1983).
5. C. S. Nichols, and C. Y. Fong, The effects of coordination and local disorder on impurity states in hydrogenated amorphous silicon, Mat. Res. Soc. Symp. Proc., 95:57 (1987).
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献