1. Taur Y (1999) CMOS scaling beyond 0.1um: how far can it go. VLSI-TSA, 6–9
2. Neaton JB, Muller DA, Ashcroft NW (2000) Electronic properties of the Si/SiO2 interface from first principles. Phys Rev Lett 85(6):1298–1301
3. Duffy JA (1990) Bonding energy levels and bands in inorganic solids. Wiley, New York
4. Hubbard KJ, Scholm DG (1996) Thermodynamic stability of binary oxides in contact with silicon. J Mater Res 11:2757–2776
5. Mahapatra R, kar G, Samantaray C, Dhar A, bhattacharya D, Ray S (2002) ZrO2 as a high-k dielectric for strained SiGe MOS devices. B Mater Sci 25(6):455–457