Enhanced Residual Disorder in Silicon from Recoil Implantation of Oxygen and Nitrogen by Arsenic Implants Through Dielectric Layers-Reference-Cited by-同舟云学术

Enhanced Residual Disorder in Silicon from Recoil Implantation of Oxygen and Nitrogen by Arsenic Implants Through Dielectric Layers

Published:1975 Issue: Volume: Page:633-639
ISSN:
Container-title:Ion Implantation in Semiconductors
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Author:

Sigmon T. W.,Chu W. K.,Müller H.,Mayer J. W.

Publisher

Springer US

Link

http://link.springer.com/content/pdf/10.1007/978-1-4684-2151-4_80.pdf

Reference6 articles.

1. T. R. Cass and V. G. K. Reddi, Appl. Phys. Lett. 23,268 (1973).

2. E. H. Bogardus and M. R. Poponiak, Appl. Phys. Lett. 23, 553 (1973).

3. W. K. Chu, H. Müller, J. W. Mayer and T. W. Sigmon, Appl. Phys. Lett. (to be published).

4. P. P. Pronko, J. B. Mitchell and J. Schewchun, Proceedings of the Second International Conference on Ion Implantation in Semiconductors, I. Ruge and J. Graul (Eds.), Springer-Verlag, Berlin.

5. W. K. Chu, H. Müller, J. W. Mayer and T. W. Sigmon. Paper III-5 This conference.

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