Projected Range Distribution of Implanted Ions in a Double-Layer Substrate-Reference-Cited by-同舟云学术

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Projected Range Distribution of Implanted Ions in a Double-Layer Substrate

Published:1975 Issue: Volume: Page:423-428
ISSN:
Container-title:Ion Implantation in Semiconductors
language:
Short-container-title:

Author:

Ishiwara H.,Furukawa S.,Yamada J.,Kawamura M.

Publisher

Springer US

Link

http://link.springer.com/content/pdf/10.1007/978-1-4684-2151-4_53.pdf

Reference11 articles.

1. M.R. MacPherson, Appl. Phys. Letters, 18, 502 (1971)

2. T. Warabisaco, I. Yoshida and T. Tokuyama, Proc. 4th Conf. Solid State Devices, Tokyo, Suppl. Japan Soc. Appl. Phys. 42, 181 (1973)

3. M. Kamoshida, Appl. Phys. Letters, 22, 404 (1973)

4. R. W. Bower, H.G. Dill, K.G. Aubuchon and S.T. Thompson, IEEE Trans. ED-15, 757 (1968)

5. I. Yoshida, T.Matsuhara, M.Kubo and T.Tokuyama, will be presented in 6th Conf. Solid State Devices, Tokyo, 1974 No.B-6(5)

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4. Ion Implantation;Fundamentals of Semiconductor Processing Technology;1995

5. Simulation of range profiles for boron implantation into SiO2/Si and Si3N4/SiO2/Si targets;Applied Physics A Solids and Surfaces;1990-07

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