EPR Studies of Lattice Defects in Semiconductors-Reference-Cited by-同舟云学术

EPR Studies of Lattice Defects in Semiconductors

Published:1976 Issue: Volume: Page:203-220
ISSN:
Container-title:Defects and Their Structure in Nonmetallic Solids
language:
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Author:

Watkins G. D.

Publisher

Springer US

Link

http://link.springer.com/content/pdf/10.1007/978-1-4684-2802-5_7

Reference55 articles.

1. For EPR studies in germanium, see J. A. Baldwin, J.., J. Appl. Phys. 36., 793, 2079 (1965), D. L. Trueblood, Phys. Rev. 161, 828 (1967).

2. For EPR studies in diamond, see the review by J. Owen, in Physical Properties of Diamond, edited by R. Berman (Clarendon Press, Oxford 1965) p. 274. See also J. F. Lomer and A. M. A. Wild, Phil. Mag. 24, 273 (1971) and Rad. Effects 17, 37 (1973); Y. M. Kim, Y. H. Lee, P. Brosius and J. W. Corbett, in Radiation Damage and Defects in Semiconductors ( The Inst, of Physics, London 1973 ) p. 202.

3. G. D. Watkins, IEEE Trans, on Nucl. Science NS-16, 13 (1969).

4. G. D. Watkins, in Radiation Damage in Semiconductors ( Dunod, Paris 1965 ) p. 97.

5. K. L. Brower, Phys. Rev. B1, 1908 (1970).

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