1. ALEXANDER, F.B. et al. Spontaneous and Stimulated Infra-Red Emission from Indium Phosphide Arsenide Diodes. APPLIED PHYS. LETTERS, v. 4, no. 1, Jan. 1, 1964. p. 13–15.
2. ALLEN, H.A. and E.W. MEHAL. Deposition of Epitaxial InAsxP1-x on GaAs and GaP Substrates. ELECTROCHEM. SOC., J., v. 117, no. 8, Aug. 1970. p. 1081–1082.
3. ANTYPAS, G.A. and T.O. YEP. Growth and Characterization of Liquid-Phase Epitaxial InAslxPx. J. OF APPLIED PHYS., v. 42, no. 8, July 1971. p. 3201–3204.
4. BASOV, N.G. et al. Properties of Injection Lasers at 0.8–1.1 u. SOVIET PHYS. TECH. PHYS., v. 12, no. 2, Aug. 1967. p. 250–257.
5. BELL, R.L. et al. Interfacial Barrier Effects in III-V Photoemitters. APPLIED PHYS. LETTERS, v. 19, no. 12, Dec. 15, 1971. p. 513–515.