1. S. Cristoloveanu, “Physical mechanisms of hot-carrier-induced degradation in deep-submicron MOSFETs,” ESSDERC’93 Conf. Proc. J. Borel, P. Gentil, J.P. Noblanc, A. Nouailhat, and M. Verdone (eds.), Ed. Frontières, Gif-sur-Yvette, France, p. 797, 1993.
2. P. Heremans, R. Bellens, G. Groeseneken, A.. v. Schwerin, W. Weber, M. Brox, and H.E. Maes, “The mechanisms of hot carrier degradation,” in Hot Carrier Design Considerations for MOS Devices and Circuits C.T. Wang (ed.), Van Nostrand Reinhold, New York, 1992.
3. S. Cristoloveanu, H. Haddara, and N. Revil, “Defect localization induced by hot carrier injection in short-channel MOSFETs: concept, modeling and characterization,” Microelectron. Reliability vol. 33, p. 1365, 1993.
4. H. Haddara and S. Cristoloveanu, “Two-dimensional modeling of locally damaged short-channel MOSFETs operating in the linear region,” IEEE Trans. Electron Devices vol. 34, p. 378, 1987.
5. T. Ouisse, S. Cristoloveanu, and G. Borel, “Hot carrier-induced degradation of the back interface in short-channel silicon-on-insulator MOSFETs,” IEEE Electron Device Lett. vol. 12, p. 290, 1991.