Phenomenological Physics of Hot Carriers in Semiconductors-Reference-Cited by-同舟云学术

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Phenomenological Physics of Hot Carriers in Semiconductors

Published:1980 Issue: Volume: Page:1-42
ISSN:
Container-title:Physics of Nonlinear Transport in Semiconductors
language:
Short-container-title:

Author:

Hess K.

Publisher

Springer US

Link

http://link.springer.com/content/pdf/10.1007/978-1-4684-3638-9_1.pdf

Reference38 articles.

1. Asche, M. and Borzeskowski, J. V., 1970, Phys. Stat. Sol. 37:433.

2. Baraff, G. A., 1962, Phys. Rev. 128:2507.

3. Butcher, P. N., and Fawcett, W., 1966, Phys. Letters 21:489.

4. Conwell, E. M., 1967,High Field Transport in Semiconductors, Academic Press, New York.

5. Dumke, W. P., 1967, Phys. Rev. 167:783.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hot-electron effect in spin relaxation of electrically injected electrons in intrinsic Germanium;Journal of Physics: Condensed Matter;2015-05-28

2. Analytical modeling of thermal noise in deep submicron MOSFETs;Analog Integrated Circuits and Signal Processing;2008-12-06

3. Mobility Model for Hydrodynamic Transport Equations;Advanced Physical Models for Silicon Device Simulation;1998

4. Unified bulk mobility model for low- and high-field transport in silicon;Journal of Applied Physics;1996

5. REAL SPACE TRANSFER: GENERALIZED APPROACH TO TRANSPORT IN CONFINED GEOMETRIES;Hot Carriers in Semiconductors;1988

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