Author:
Hsu Po-Yen,Lin Shou-Sheu,Yang Cheng-Fu,Lin Jing-Jenn
Reference9 articles.
1. Hughes HL, Giroux RR (1964) Space radiation affects MOSFET’s. Electronics 37:58
2. Ma TP, Dressenforder PV (1989) Ionizing radiation effects in MOS devices and circuits. Wiley, New York
3. Listvan MA, Vold PJ, Arch DK (1987) Ionizing radiation hardness of GaAs technologies. IEEE Trans Nucl Sci 34:1663–1668
4. Markus H, John H, Sharp ID, Maren F, Martin S, Herwig GP, Stefan T (2010) Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices. Appl Phys Lett 96:092110
5. Revesz AG, Goldstein B (1969) Electron paramagnetic resonance investigation of the Si–SiO interface. Surf Sci 14:361
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Production and Neutron Irradiation Tests on a New Epoxy/Molybdenum Composite;International Journal of Polymer Analysis and Characterization;2015-03-11