1. Y. Miyasaka and S. Matsubara, “Dielectric Properties of Sputter-Deposited BaTi03-SrTi03 Thin Films” Proc. 7th Int. Symp. Appl. of Ferroelectrics, pp.121, 1990
2. K. Koyama, T. Sakuma, S. Yamamichi, H. watanabe, H. Aoki, S. Ohya, Y. Miyasaka and T. Kikkawa, “A Stacked Capasitor with (BaxSrl-x)Ti03 for 256MDRAM”, IEDM Tech. Digest 1991, pp. 823–826, 1991
3. T. Horikawa, N. Mikami, T. Makita, J. Tanimura, M. Kataoka, K. Sato and M. Nunoshita, “Dielectric Properties of (Ba,Sr)Ti03 Thin Films Deposited by RF Sputtering”, Jpn. J. Appl. Phys.;32-9B:pp.4126–4130, 1993
4. T. Eimori, Y. Ohno, H. Kimura, J. Matsufusa, S. Kishimura, A. Yoshida, H. Sumitani, T. Maruyama, Y. hayashide, K. Moriizumi, T. katayama, M. Asakura, T. Horikawa, T. Shibano, H. Itoh, K. Sato, K. Namba, T. Nishimura, S. Satoh and H. Miyoshi. “A Newly Designed Planar Stacked Capasitor Cell with High dielectric Constant Film for 256Mbit DRAM”, IEDM Tech. Digest; pp.631, 1993
5. T. Horikawa, N. Mikami, H. Itoh, Y Ohno, T. Makita and K. Sato, “(Ba0.75Sr0.25)TiO3 Films for 256 Mbit DRAM”. IEICE Trans. on Electronics; Vol.E77-C-3:pp.385–391, 1994