(Ba,Sr)TiO3 Thin Films for Dram’s-Reference-Cited by-同舟云学术

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(Ba,Sr)TiO3 Thin Films for Dram’s

Published:1997 Issue: Volume: Page:1-42
ISSN:
Container-title:Thin Film Ferroelectric Materials and Devices
language:
Short-container-title:

Author:

Summerfelt Scott R.

Publisher

Springer US

Link

http://link.springer.com/content/pdf/10.1007/978-1-4615-6185-9_1

Reference136 articles.

1. R. H. Dennard, United States Patent, 3387286, July 14, 1967 (1968).

2. P. C. Fazan, Integrated Ferroelectrics, 4, 247–256 (1994).

3. SIA, (1995).

4. C. W. Teng, SSDM, (1995).

5. H. Watanabe, A. Sakai, T. Tatsumi and T. Niino, Solid State Technology, 30, 29–33 (1992).

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Mg doping on dielectric properties of sol-gel derived (Pb0.7Sr0.3)Mg x Ti1–x O3–x thin film;Journal of Electroceramics;2007-03-23

2. Investigation of the leakage mechanism in Sr–Ta–O and Bi–Ta–O thin film capacitors;Journal of Applied Physics;2006-12-15

3. Science and technology of thin films and interfacial layers in ferroelectric and high-dielectric constant heterostructures and application to devices;Journal of Applied Physics;2006-09

4. Ferroelectric thin films: Review of materials, properties, and applications;Journal of Applied Physics;2006-09

5. Dielectric constant dispersion of yttrium-doped (Ba,Sr)TiO3 films in the high-frequency (10kHz–67GHz) domain;Applied Physics Letters;2005-12-05

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