Transport Phenomena in Heavily Doped Semiconductors-Reference-Cited by-同舟云学术

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Transport Phenomena in Heavily Doped Semiconductors

Published:1969 Issue: Volume: Page:77-205
ISSN:
Container-title:Heavily Doped Semiconductors
language:
Short-container-title:

Author:

Fistul’ Victor I.

Publisher

Springer New York

Link

http://link.springer.com/content/pdf/10.1007/978-1-4684-8821-0_4.pdf

Reference160 articles.

1. A. H. Wilson, Proc. Roy. Soc. (London), 133A:458 (1931).

2. F. F. Vol’kenshtein, Electrical Conductivity of Semiconductors [in Russian], Gostekhizdat, 1947.

3. A. I. Ansel’m, Introduction to the Theory of Semiconductors [in Russian], Fizmatgiz, 1963.

4. H. Brooks, Collection: Problems in Modern Physics [Russian translation], Vol. 8, p. 74 (1957).

5. R. A. Smith, Semiconductors, Cambridge University Press, 1961.

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