Doping and conductivity in widegap II–VI compounds-Reference-Cited by-同舟云学术

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Doping and conductivity in widegap II–VI compounds

Published:1992 Issue: Volume: Page:280-294
ISSN:
Container-title:Widegap II–VI Compounds for Opto-electronic Applications
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Author:

Neumark G. F.

Publisher

Springer US

Link

http://link.springer.com/content/pdf/10.1007/978-1-4615-3486-0_11

Reference73 articles.

1. Hartmann, H., Mach, R. and Selle, B. (1982) Curr. Top. Mater. Sci, 9, 1.

2. Bhargava, R. (1982) J. Cryst. Growth, 59, 15.

3. Bhargava, R. (1988) J. Cryst. Growth, 86, 873.

4. Dean, P.J. (1979) In Defects and Radiation Effects in Semiconductors, Inst. Phys. Conf. Ser., 46, 100.

5. Marfaing, Y. (1981) Prog. Cryst. Growth Charact., 4, 317.

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1. Synthesis and properties of epitaxial electronic oxide thin-film materials;Materials Science and Engineering: R: Reports;2004-03

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