Reliability Study of InP-Based HBTs Operating at High Current Density
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Publisher
Springer New York
Link
http://link.springer.com/content/pdf/10.1007/978-1-4614-4337-7_18
Reference33 articles.
1. K. Sano, K. Ishii, K. Murata, K. Kurishima, M. Ida, T. Shibata, T. Enoki, H. Sugahara. Over-100-Gbit/s multiplexing operations of InP DHBT selector IC designed with high collector-current density. Extended Abstracts of International Conference on Solid State Devices and Materials (SSDM), 2004, pp. 312–313. (JSAP, Tokyo)
2. S. Tsunashima, K. Murata, M. Ida, K. Kurishima, T. Kosugi, T. Enoki, H. Sugahara, A 150-GHz dynamic frequency divider using InP/InGaAs DHBTs. Technical Digests of GaAs IC Symposium, 2003, pp. 284–287. (IEEE, Piscataway, NJ)
3. M.J. Rodwell, B. Brar, InP bipolar ICs: scaling roadmaps, frequency limits, manufacturable technologies. Proc. IEEE 96(2), 271–286 (2008)
4. H. Kamitsuna, K. Kurishima, M. Ida, K. Sano, 100 Gbit/s clock recovery OEIC using InP/InGaAs HPT. Electron. Lett. 40(12), 764–766 (2004)
5. N. Kashio, K. Kurishima, K. Sano, M. Ida, N. Watanabe, H. Fukuyama, Monolithic integration of InP HBTs and uni-traveling-carrier photodiodes using nonselective regrowth. IEEE Trans. Electron Devices 54(7), 1651–1657 (2007)
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