Convergent Beam Electron Diffraction Studies of Defects, Strains and Composition Profiles in Semiconductors-Reference-Cited by-同舟云学术

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Convergent Beam Electron Diffraction Studies of Defects, Strains and Composition Profiles in Semiconductors

Published:1989 Issue: Volume: Page:59-74
ISSN:0258-1221
Container-title:Evaluation of Advanced Semiconductor Materials by Electron Microscopy
language:
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Author:

Cherns D.

Publisher

Springer US

Link

http://link.springer.com/content/pdf/10.1007/978-1-4613-0527-9_5.pdf

Reference15 articles.

1. P.B. Hirsch, A. Howie, R.B. Nicholson, D.W. Pashley and M.J. Whelan, “Electron Microscopy of Thin Crystals”, Krieger, New York (1977).

2. M. Tanaka, R. Saito, K. Ueno and Y. Harada, J. Electron Microsc. 29 (1980) 408.

3. D.J.H. Cockayne, I.L.F. Ray and M.J. Whelan, Phil. Mag. 20 (1969) 1265.

4. D. Cherns, C.J. Kiely and A.R. Preston, Ultramicroscopy 24 (1988) 355.

5. D. Cherns and A.R. Preston, J. Electron Microscope Technique: in press.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron microscopy of ultra-thin buried layers in InP and InGaAs;Philosophical Magazine A;1993-07

2. Convergent beam electron diffraction studies of strain in Si/SiGe superlattices;Philosophical Magazine A;1991-09

3. Principles and applications of convergent beam electron diffraction: A bibliography (1938-1990);Journal of Electron Microscopy Technique;1991-01

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