Dilute Bismides for Mid-IR Applications
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Publisher
Springer New York
Link
http://link.springer.com/content/pdf/10.1007/978-1-4614-8121-8_1
Reference54 articles.
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3. Alberi, K., Wu, J., Walukiewicz, W., Yu, K., Dubon, O., Watkins, S., Wang, C., Liu, X., Cho, Y.-J., Furdyna, J.: Valence-band anticrossing in mismatched III-V semiconductor alloys. Phys. Rev. B 75, 045203 (2007)
4. Cooke, D.G., Hegmann, F.A., Young, E.C., Tiedje, T.: Electron mobility in dilute GaAs bismide and nitride alloys measured by time-resolved terahertz spectroscopy. Appl. Phys. Lett. 89, 122103 (2006)
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