Author:
Gu Richard X.,Sharaf Khaled M.,Elmasry Mohamed I.
Reference23 articles.
1. A. Vladimirescu, and S. Liu, “The Simulation of MOS Integrated Circuits using SPICE2,” Memo. No. UCB/ERL M80/7, Univ. California, Berkeley, Oct. 1980.
2. L.D. Yau, “A Simple Theory to Predict the Threshold Voltage of Short-Channel IGFET’s,” Solid State Electronics, Vol. 17, pp. 1059–1063, 1974.
3. P. Smith, M. Inoue, and J. Frey, “Electron Velocity in Si GaAs at Very High Electric Fields,” App. Phys. Lett., Vol. 37, pp. 797–798, 1980.
4. A.G. Sabnis and J.T. Clemens, “Characterization of Electron Mobility in the Inverted < 100 > Si Surface,” International Electron Devices Meeting Tech. Dig., 37pp. 18–21, 1979.
5. D. Frohman-Bentchkowsky, “On the Effect of Mobility Variation on MOS Device Characteristics,” Proc. IEEE, Vol. 56, 1968.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献