Thermal-stress reduction for a Czochralski grown single crystal
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Engineering,General Mathematics
Link
http://link.springer.com/content/pdf/10.1007/s10665-006-9117-3.pdf
Reference20 articles.
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2. Jordan AS, Caruso R, von Neida AR (1980) A thermoelastic analysis of dislocation generation in pulled GaAs crystals. The Bell Syst Tech J 59(4):593–637
3. Müller G (2002) Experimental analysis and modeling of melt growth processes. J Cryst Growth 237–239:1628–1637
4. Jeong JH, Kang IS (2002) Optimization of the crystal surface temperature distribution in the single-crystal growth process by the Czochralski method. J Comput Phys 177:284–312
5. Bohun S, Frigaard I, Huang H, Liang S (2006) A semi-analytical thermal stress model for the Czochralski growth of type III-V compounds. SIAM J Appl Math 66(5):1533–1562
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Application of the Variational Method of Homogeneous Solutions for the Optimal Control of the Axisymmetric Thermoelastic State of a Cylinder;Journal of Mathematical Sciences;2019-10-11
2. Impact of diameter fluctuations on thermal stresses during Czochralski silicon growth;Journal of Crystal Growth;2013-01
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