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Cd and Te-based ohmic contact materials to p-Type ZnSe

  • Published:1996-12 Issue:12 Volume:25 Page:1823-1831
  • ISSN:0361-5235
  • Container-title:Journal of Electronic Materials
  • language:en
  • Short-container-title:JEM

Author:

Hashimoto K.,Koide Y.,Tadanaga O.,Oku T.,Teraguchi N.,Tomomuea Y.,Suzuki A.,Murakami Masanori

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. II-VI light emitting diode with low operation voltage;Optoelectronic Materials and Devices II;2000-07-11

2. Ohmic contacts to p-ZnSe and p-GaN wide-gap semiconductors;Electronics and Communications in Japan (Part II: Electronics);1999-10

3. Effects of intermediate semiconductor layers on carrier transport mechanisms through p-ZnSe/metals interfaces;Journal of Electronic Materials;1998-08

4. Electrical properties at p-ZnSe/metal interfaces;Journal of Electronic Materials;1998-08

5. Schottky barrier heights of contact metals to p-type ZnSe;Journal of Electronic Materials;1998-06
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