Rapid thermal chemical vapor deposition of in-situ boron doped polycrystalline SIxGe1-x-Reference-Cited by-同舟云学术

Rapid thermal chemical vapor deposition of in-situ boron doped polycrystalline SIxGe1-x

Published:1992-01 Issue:1 Volume:21 Page:61-64
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Sanganeria M.,Grider D. T.,öztürk M. C.,Wortman J. J.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02670921.pdf

Reference13 articles.

1. S. S. Iyer, G. L. Patton, J. M. C. Stork, B. S. Meyerson and D. L. Harame, IEEE Trans. Electron Devices36, 2043 (1989).

2. T. King, J. R. Pfiester, J. D. Shott, J. P. McVittie and K. C. Saraswat, IEDM Technical Digest, p. 253, (1990).

3. D. T. Grider, M. C. Öztürk, M. Sanganeria and J. J. Wort- man, presented at the 1991 Electron. Mater. Conf., Boulder, Co.

4. M. C. Öztürk, Y. Zhong, D. T. Grider, M. Sanganeria, J. J. Wortman and M. A. Littlejohn, Proc. SPIE Symp. on Rapid Thermal and Related Processing Techniques1393, 260 (1990).

5. D. T. Grider, M. C. Öztürk and J. J. Wortman, to be pub- lished in Proc. 3rd Int. Symp. on ULSI Sci. Tech. Electro- chem. Soc. Spring 1991 Mtg, Washington, DC.

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