Origin of void defects in Hg1−xCdxTe grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Origin of void defects in Hg1−xCdxTe grown by molecular beam epitaxy

Published:1995-09 Issue:9 Volume:24 Page:1207-1210
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Zandian M.,Arias J. M.,Bajaj J.,Pasko J. G.,Bubulac L. O.,Dewames R. E.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02653075.pdf

Reference6 articles.

1. R.E. DeWames, J.M. Arias, L.J. Kozlowski and G.M. Williams,Infrared Detectors State of the Art, SPIE Conf. Proc. 1735, 2 (1992).

2. R. Balcerak and L. Brown,J. Vac. Sci. Technol. B 10, 1353 (1992).

3. M. Seelmann-Eggebert, G. Carey, V. Krishnamurthy and C.R. Helms,J. Vac. Sci. Technol. B 1 (4) 1297 (1992).

4. J.M. Arias,II-VI Semiconductor Compounds, ed. M. Pain (Singapore: World Scientific Publishing Co. Pty. Ltd., 1992).

5. J.M. Arias, M. Zandian, J. Bajaj, J.G. Pasko, L.O. Bubulac, S.H. Shin and R.E. DeWames, to be published inJ. Electron. Mater.

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