Terahertz Emission from GaAs Films on Si(100) and Si(111) Substrates Grown by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

Terahertz Emission from GaAs Films on Si(100) and Si(111) Substrates Grown by Molecular Beam Epitaxy

Published:2011-02-01 Issue:4 Volume:32 Page:418-425
ISSN:1866-6892
Container-title:Journal of Infrared, Millimeter, and Terahertz Waves
language:en
Short-container-title:J Infrared Milli Terahz Waves

Author:

Yoshioka Takashi,Takatori Satoru,Minh Pham Hong,Cadatal-Raduban Marilou,Nakazato Tomoharu,Shimizu Toshihiko,Sarukura Nobuhiko,Estacio Elmer,Misa John Vincent,Jaculbia Rafael,Defensor Michael,Somintac Armando,Salvador Arnel

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation,Radiation

Link

http://link.springer.com/content/pdf/10.1007/s10762-011-9765-x.pdf

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