Design and Fabrication of Silcon Microlens with Low SAG for 528(H) � 528(V) Infrared Charge-Coupled Device Application

Author:

Ke Caijun,Yi Xinjian,Lai Jianjun,Chen Sihai

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation,Radiation

Reference14 articles.

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2. [2] Tribolet, Philipe, Hirel, P.; Lussereau, A.; Vuillermet, Michel. Main results of Sofradir IRFPAs including IRCCD and IRCMOS detectors. Proceedings of SPIE - the International Society for Optical Engineering, Vol.2225 (1994): 369?381

3. [3] Awamoto, Kenji, Ito, Yuichiro; Ishizaki, Hiroyuki; Yoshida, Y. Resolution improvement for HgCdTe IRCCD. Proceedings of SPIE - the International Society for Optical Engineering, Vol.1685 (1992): 213?220

4. [4] Arutyunov.V.A., Bogatyrenko.N.G., Prokofev. A.E. Infrared 512×512 Schottky-barrier CCD arrays for the 1.2-5.5-?m range that allow various configurations of the focal plane. Journal of Optical Technology, Vol.66, No.12 (1999): 1058?1059

5. [5] Shoda, Masahiro; Yamada, Hidenobu; Yamanaka, Hideki; Akagawa, Keiichi. Construction and performance of an 811×508 element multi-wavelength PtSi IRCCD imager. Proceedings of SPIE - the International Society for Optical Engineering, Vol.3436, No.1 (1998): 184?193

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