Analysis of the actual Schottky-barrier contact model in a wide temperature and bias-voltage range-Reference-Cited by-同舟云学术

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Analysis of the actual Schottky-barrier contact model in a wide temperature and bias-voltage range

Published:2004-09 Issue:9 Volume:47 Page:688-701
ISSN:0033-8443
Container-title:Radiophysics and Quantum Electronics
language:en
Short-container-title:Radiophys Quantum Electron

Author:

Bozhkov V. G.,Zaitzev S. E.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Astronomy and Astrophysics,Nuclear and High Energy Physics,Statistical and Nonlinear Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11141-005-0006-9.pdf

Reference21 articles.

1. Low-frequency noise and current–voltage characteristics of Schottky barrier contacts in a wide temperature range

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Ir-n-GaAs Schottky barrier contacts made by electrochemical deposition;Journal of Applied Physics;2014-06-14

2. Investigation of special features of parameters of Schottky barrier contacts caused by a nonlinear bias dependence of the barrier height;Journal of Applied Physics;2012-03

3. Influence of the nonlinear bias dependence of the barrier height on measured Schottky-barrier contact parameters;Journal of Applied Physics;2011-06

4. About the determination of the Schottky barrier height with the C-V method;Journal of Applied Physics;2011-04

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