Resonance charge relaxation in physical barrier layers-Reference-Cited by-同舟云学术

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Resonance charge relaxation in physical barrier layers

Published:1983-11 Issue:11 Volume:26 Page:1024-1028
ISSN:0038-5697
Container-title:Soviet Physics Journal
language:en
Short-container-title:Soviet Physics Journal

Author:

Oreshkin P. T.,Garmash Yu. V.,Perelygin A. I.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/BF00896666.pdf

Reference25 articles.

1. P. T. Oreshkin, Izv. Vyssh. Uchebn. Zaved., Fizika, No. 9, 136 (1981).

2. P. T. Oreshkin, Semiconductor and Dielectric Physics [in Russian], Vysshaya Shkola, Moscow (1977).

3. P. T. Oreshkin, Fiz. Tekh. Poluprovodn.,15, 179 (1981).

4. P. T. Oreshkin, Izv. Vyssh. Uchebn. Zaved., Fizika, No. 6, 20 (1981).

5. V. G. Georgiu, M. B. Ivanov, V. G. Sidorov, and S. N. Shlikhtov, Zarubezh. Radioelektron., No. 8, 3 (1979).

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