Watt-level red-emitting diode lasers and modules for display applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Atomic and Molecular Physics, and Optics
Link
http://link.springer.com/content/pdf/10.1007/s10043-015-0157-7.pdf
Reference19 articles.
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2. Tukiainen, A., Toikkanen, L., Haavisto, M., Erojärvi, V., Rimpiläinen, V., Viheriälä, J., Pessa, M.: AlInP–AlGaInP quantum-well lasers grown by molecular beam epitaxy. IEEE Photon Technol. Lett. 18(21), 2257–2259 (2006)
3. Shimada, N., Ohno, A., Abe, S., Miyashita, M., Yagi, T.: High-power 625-nm Al-GaInP laser diode. IEEE J. Sel. Topics Quantum Electron. 17 (6), 1723–1726 (2011)
4. Pezeshki, B., Hagberg, M., Lu, B., Zelinski, M., Zou, S., Kolev, E.: High-power and diffraction-limited red lasers. Proc. SPIE 3947, 80–90 (2000)
5. Blume, G., Kaspari, C., Feise, D., Sahm, A., Sumpf, B., Eppich, B., Paschke, K.: Tapered diode lasers and laser modules near 635 nm with efficient fiber coupling for flying-spot display applications. Opt. Rev. 19(6), 395–399 (2012)
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