First-principles study of InxGa1-xAs1-yPy with different compositions
Author:
Funder
National Natural Science Foundation of China
Public Welfare project of Ningbo City
Publisher
Springer Science and Business Media LLC
Subject
Atomic and Molecular Physics, and Optics
Link
https://link.springer.com/content/pdf/10.1007/s10043-022-00742-3.pdf
Reference22 articles.
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2. Blankemeier, L., Rezaeifar, F., Garg, A., Kapadia, R.: Integrated photonics for low transverse emittance, ultrafast negative electron affinity GaAs photoemitters. J. Appl. Phys. 126, 33102 (2019). https://doi.org/10.1063/1.5093938
3. André, J.P., Guittard, P., Hallais, J., Piaget, C.: GaAs photocathodes for low light level imaging. J. Cryst. Growth. 55, 235–245 (1981). https://doi.org/10.1016/0022-0248(81)90293-1
4. Somvanshi, D., Chauhan, D., Lao, Y., Perera, A.G.U., Li, L., Khanna, S.P., Linfield, E.H.: Analysis of extended threshold wavelength photoresponse in nonsymmetrical p-GaAs/AlGaAs heterostructure photodetectors. IEEE J. Sel. Top. Quantum Electron. 24, 1–7 (2018). https://doi.org/10.1109/JSTQE.2017.2773622
5. Adachi, S.: III-V ternary and quaternary compounds. In: Kasap, S., Capper, P. (eds.) Springer Handbook of electronic and photonic materials, pp. 735–752. Springer, US, Boston, MA (2007). https://doi.org/10.1007/978-0-387-29185-7_31
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