Performance comparisons between inverted and conventional avalanche photodiodes for larger capacity applications
Author:
Funder
National Key Research and Development Program of China
Publisher
Springer Science and Business Media LLC
Subject
Atomic and Molecular Physics, and Optics
Link
https://link.springer.com/content/pdf/10.1007/s10043-022-00746-z.pdf
Reference13 articles.
1. Nakajima, F., Nada, M., Yoshimatsu, T.: High-speed avalanche photodiode and high-sensitivity receiver optical subassembly for 100-gb/s ethernet. J. Lightwave Technol. 34(2), 243–248 (2016). https://doi.org/10.1109/JLT.2015.2464710
2. Nada, M., Yoshimatsu, T., Muramoto, Y., Yokoyama, H., Matsuzaki, H.: Design and performance of high-speed avalanche photodiodes for 100-gb/s systems and beyond. J. Lightwave Technol. 33(5), 984–990 (2015). https://doi.org/10.1109/JLT.2014.2377034
3. Nada, M., Yamada, Y., Matsuzaki, H.: Responsivity-bandwidth limit of avalanche photodiodes: toward future ethernet systems. IEEE J. Sel. Top. Quantum Electron. 24(2), 1–11 (2018). https://doi.org/10.1109/JSTQE.2017.2754361
4. Nada, M., Yamada, Y., Matsuzaki, H.: A high-linearity avalanche photodiodes with a dual-carrier injection structure. IEEE Photon. Technol. Lett. 29(21), 1828–1831 (2017). https://doi.org/10.1109/LPT.2017.2753262
5. Campbell, J.C.: Recent advances in telecommunications avalanche photodiodes. J. Lightwave Technol. 25(1), 109–121 (2007). https://doi.org/10.1109/JLT.2006.888481
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