Transient lateral photovoltaic effect observed in Ti–SiO2–Si structure-Reference-Cited by-同舟云学术

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Transient lateral photovoltaic effect observed in Ti–SiO2–Si structure

Published:2022-11-23 Issue:1 Volume:30 Page:9-16
ISSN:1340-6000
Container-title:Optical Review
language:en
Short-container-title:Opt Rev

Author:

Ling Xiang,Zhu Peng Fei,Zhu Kun,Ping Yun Xia,Song Pei,Du Jin Yi

Funder

Liupanshui Normal University

Publisher

Springer Science and Business Media LLC

Subject

Atomic and Molecular Physics, and Optics

Link

https://link.springer.com/content/pdf/10.1007/s10043-022-00776-7.pdf

Reference38 articles.

1. Huang, X., Mei, C., Gan, Z., Zhou, P., Wang, H.: Lateral photovoltaic effect in p-type silicon induced by surface states. Appl. Phys. Lett. 110(12), 121103 (2017)

2. Du, L., Wang, H.: Infrared laser induced lateral photovoltaic effect observed in Cu2O nanoscale film. Opt. Express 18(9), 9113–9118 (2010)

3. Henry, J., Livingstone, J.: Improved position sensitive detectors using high resistivity substrates. J. Phys. D Appl. Phys. 41(16), 165106 (2008)

4. Yu, C.Q., Wang, H., Xiao, S.Q., Xia, Y.X.: Direct observation of lateral photovoltaic effect in nano-metal-films. Opt. Express 17(24), 21712–21722 (2009)

5. Foisal, A.R.M., Nguyen, T., Dinh, T., Nguyen, T.K., Tanner, P., Streed, E.W., Dao, D.V.: 3C-SiC/Si heterostructure: an excellent platform for position-sensitive detectors based on photovoltaic effect. ACS Appl. Mater. Inter. 11(43), 40980–40987 (2019)

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