Effect of substitutional doping on temperature dependent electrical parameters of amorphous Se-Te semiconductors-Reference-Cited by-同舟云学术

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Effect of substitutional doping on temperature dependent electrical parameters of amorphous Se-Te semiconductors

Published:2013-09 Issue:5 Volume:9 Page:629-633
ISSN:1738-8090
Container-title:Electronic Materials Letters
language:en
Short-container-title:Electron. Mater. Lett.

Author:

Sharma Neha,Sharda Sunanda,Sharma Dheeraj,Sharma Vineet,Barman P. B.,Katyal S. C.,Sharma Pankaj,Hazra S. K.

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s13391-013-3002-9.pdf

Reference32 articles.

1. K. Nakayama, T. Sato, P. Richard, T. Kawahara, Y. Sekiba, T. Qian, G. F. Chen, J. L. Luo, N. L. Wang, H. Ding, and T. Takahashi, Phys. Rev. Lett. 105, 197001–4 (2010).

2. D. S. Jeong, R. Thomas, R. S. Katiyar, J. F. Scott, H. Kohlstedt, A. Petraru, and C. S. Hwang, Rep. Prog. Phys. 75, 076502 (2012).

3. K.-B. Song, S.-S. Lee, K.-A. Kim, J.-D. Suh, J.-H. Kim, T.-S. Lee, B.-K. Cheong, and W.-M. Kim, Appl. Phys. Lett. 90, 263510 (2007).

4. E. Güneri and A. Kariper, Electron. Mater. Lett. 9, 13 (2013).

5. S. J. Park, S.-J. Park, D. B. Park, M. An, M.-H. Cho, J. G. Kim, H. D. Na, S. H. Park, and H. C. Sohn, Electron. Mater. Lett. 8, 175 (2012)

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