Enhancement of thermoelectric properties of Mg2Si compounds with Bi doping through carrier concentration tuning-Reference-Cited by-同舟云学术

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Enhancement of thermoelectric properties of Mg2Si compounds with Bi doping through carrier concentration tuning

Published:2014-07 Issue:4 Volume:10 Page:807-811
ISSN:1738-8090
Container-title:Electronic Materials Letters
language:en
Short-container-title:Electron. Mater. Lett.

Author:

Lee Ji Eun,Cho Sang-Hum,Oh Min-Wook,Ryu Byungi,Joo Sung-Jae,Kim Bong-Seo,Min Bok-Ki,Lee Hee-Woong,Park Su-Dong

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s13391-014-4148-9.pdf

Reference27 articles.

1. J. R. Sootsman, D. Y. Chung, and M. G. Kanatzidis, Angew. Chem. Int. Ed. 48, 8616 (2009).

2. B. S. Kim, I. H. Kim, B. K. Min, M. W. Oh, S. D. Park, and H. W. Lee, Electron. Mater. Lett. 9, 477 (2013).

3. J. K. Lee, M. W. Oh, S. D. Park, B. S. Kim, B. K. Min, M. H. Kim, and H. W. Lee, Electron. Mater. Lett. 8, 659 (2012).

4. M. Akasaka, T. Iida, A. Matsumoto, and K. Yamanaka, J. Appl. Phys. 104, 013703 (2008).

5. J.-Y. Jung and I.-H. Kim, Electron. Mater. Lett. 6, 187 (2010).

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