Middle Electrode in a Vertical Transistor Structure Using an Sn Layer by Thermal Evaporation
Author:
Funder
Fundação de Amparo à Pesquisa do Estado de São Paulo
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/article/10.1007/s13391-018-0034-1/fulltext.html
Reference26 articles.
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3. Ben-Sasson, A.J., Avnon, E., Ploshnik, E., Globerman, O., Shenhar, R., Frey, G.L., Tessler, N.: Patterned electrode vertical field effect transistor fabricated using block copolymer nanotemplates. Appl. Phys. Lett. 95, 213301 (2009)
4. Ben-Sasson, A.J., Tessler, N.: Patterned electrode vertical field effect transistor: theory and experiment. J. Appl. Phys. 110, 44501 (2011)
5. Chao, Y.-C., Ku, M.-C., Tsai, W.-W., Zan, H.-W., Meng, H.-F., Tsai, H.-K., Horng, S.-F.: Polymer space-charge-limited transistor as a solid-state vacuum tube triode. Appl. Phys. Lett. 97, 223307 (2010)
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