1. D. Redfield and R.H. Bube, Appl. Phys. Lett. 54, 1037 (1989) have proposed the use of stretched exponentials to describe the defect creation kinetics in a-Si:H. While I am making the point that there is lack of quantitative correlation between defect densities and solar cell performance, the stretched exponential may yet be a good description for relaxation of glassy hierarchically constrained materials, as suggested by R.G. Palmer, D.L. Stein, E. Abrahams and P.W. Anderson, Phys. Rev. Letters 53, 958, (1984).
2. A. Yokota, H. Sannomiya, S. Moriuchi, Y. Inoue, M. Itoh, Y. Nakata, and T. Tsuji, Technical Digest of 5th Photovoltaic Science and Engineering Conference, Kyoto, Japan, 637, (1990).
3. S. Guha, Final Subcontract Report, Solar Energy Research Institute Technical Report, SERI/TP-211–3918, (1990), Figures 58 and 59.
4. to be published, B. von Roedern et al.
5. L. Yang, L. Chen, and A. Catalano, presented at the Int. Meeting on Stability of Amorphous Silicon Materials and Solar Cells, Denver, CO, February 1991, to be published in American Institute of Physics Conference Proceedings.