A NEW P(A-SiN:H/A-Si:H)-I(A-Si:H)-N(A-Sic:H/A-Si:H) Superlattice Solar Cell

Author:

Varonides Argyrios C.,Rothwarf Allen

Publisher

Springer Netherlands

Reference20 articles.

1. R.R. Arya, A. Catalano, and J. O’Dowd, “Effect of Superlattice Doped Layers on the Performance of a-Si:H P-I-N Solar Cells,” Mat. Res. Soc. Symp.,Proc. Vol. 70, p. 517, 1986.

2. M. Yoshimoto et al, “Carrier transport in a-Si:H/a-Si1-xCx:H ultra- thin multilayers,” Philos. Mag. B60, No 1, pp. 89–99, 1989.

3. A. Madan and M. P. Shaw, The Physics of Amorphous Semiconductors ,Academic Press, p. 116, 1988.

4. A. Rothwarf and A. Varonides, “Superlattice Contact Layers for High Open Circuit Voltage a-Si:H Solar Cells,” 21st IEEE PVSC, Orlando Florida, pp. 1555–1559, May 1990.

5. C. Weisbuch in, “Fundamental Properties of III-V Semiconductor Two-Dimensional Quantized Structures: The Basis for Optical and Electronic Device Applications” Semiconductors and Semmetals 24, Academic Press, Willardson-Beer eds., pp 1–133, 1987.

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