Analysis of Subthreshold Characteristics for Doping Concentration of DGMOSFET Using Series Form of Potential
Author:
Publisher
Springer Netherlands
Link
http://link.springer.com/content/pdf/10.1007/978-94-007-6516-0_47
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5. Troutman RR (1979) VLSI limitations from drain-induced barrier lowering: IEEE Trans Electron Device ED-26:461–469
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