Pseudomorphic HEMTs: Device Physics and Materials Layer Design
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Publisher
Springer Netherlands
Link
http://link.springer.com/content/pdf/10.1007/978-94-009-0289-3_20.pdf
Reference82 articles.
1. Mimura, T., Hiyamizu, S., Fujii, T., and Nanbu, K. (1980) A new field-effect transistor with selectively doped GaAs/n-AlxGa1-xAs heterojunctions, Jap. J. Appl. Phys. 19, L225–L227
2. Delagebeaudeuf, D., Delescluse, P., Etienne, P., Laviron, M., Chaplart, J., and Linh, N.T. (1980) Two-dimensional electron gas MESFET structure, Electron. Lett. 16, 667–668
3. Dingle, R., Stormer, H.L., Gossard, A.C., and Wiegmann, W. (1978) Electron mobilities in modulation-doped semiconductor heterojunction superlattices, Appl. Phys. Lett. 33, 665–667
4. Stormer, H.L., Dingle, R., Gossard, A.C., Wiegmann, W., and Sturge, M.D. (1979) Two-dimensional electron gas at a semiconductor-semiconductor interface, Solid-State Comm 29, 705–709
5. Rosenberg, J.J., Benlamri, M., Kirchner, P.D., Woodall, J.M., and Pettit, G.D. (1985) An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT, IEEE Electron Device Lett. EDL-6, 491–493
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