MOVPE Technology for Multiwafer Production: Ga-Al-In-N Heterostructures and Optical and Electrical Properties of Deposited Layers-Reference-Cited by-同舟云学术

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MOVPE Technology for Multiwafer Production: Ga-Al-In-N Heterostructures and Optical and Electrical Properties of Deposited Layers

Published:1998 Issue: Volume: Page:43-51
ISSN:
Container-title:Heterostructure Epitaxy and Devices — HEAD’97
language:
Short-container-title:

Author:

Deschler M.,Beccard R.,Niebuhr R.,Wachtendorf B.,Juergensen H.

Publisher

Springer Netherlands

Link

http://link.springer.com/content/pdf/10.1007/978-94-011-5012-5_5

Reference7 articles.

1. P. M. Frijlink, J. L. Nicolas, H. P. M. M. Ambrosius, R. W. M. Linders, C. Waucquez, J. M. Marchai: J. Cryst. Growth 115 (1991) 203–210

2. D. Schmitz, E. Woelk, G. Strauch, R. Beccard, F. Schulte and H. Juergensen Inst. Phys. Conf. Ser. No. 142: Chapter 5 (1996) 895–898

3. M. Dauelsberg, L. Kadinski, Yu. N. Makarov, E. Woelk, G. Strauch, D. Schmitz and H. Jürgensen, Proc. ICSCRM’95,1995, Kyoto.

4. F. Durst, L. Kadinski and M. Schäfer, J. Crystal Growth 146 (1994) 209.

5. F. Durst, L. Kadinski, Yu. N. Makarov, M. Schäfer, V.S. Yuferev, M.G. Vasil’ev, 11th International Conference on Crystal Growth, 1995. J. Crystal Growth.

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