1. Summary of new substance and new materials. Edited and published by Nikkan Kohgyo Shinbun-Sha, (1986) pp. 134–135
2. Matsunami, H., Application of SiC to the semiconductor technology and its recent trend. Semiconductor World, 11 (1986), 40–48.
3. Furukawa, K., Uemoto, A., Fujii, Y., Shigeta, M., Suzuki, A. & Nakajima, S., Field effect transistors of CVD-grown β-SiC. Sharp Technical journal. 38 (1987), 18–21.
4. Yoshida, S., Sakuma, E., Endo, K., Misawa, S., Miyazawa, T. & Gonda, S., SiC high-temperature optoelectronic devices. Bull. Electrotech. Lab., 48(5,6) (1984), 404–419.
5. Matsunami, H., Silicon carbide films. In Thin Films from Free Atoms and Particles, ed K. J. Klabunde. Academic Press, New York, 1985, pp. 301–324.