Si-Based Magnetic Semiconductors
Author:
Publisher
Springer Netherlands
Link
http://link.springer.com/content/pdf/10.1007/978-94-007-7604-3_21-1
Reference187 articles.
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3. Huang BQ, Monsma DJ, Appelbaum I (2007) Coherent spin transport through a 350 micron thick silicon wafer. Phys Rev Lett 99:177209
4. Huang BQ, Jang H-J, Appelbaum I (2008) Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices. Appl Phys Lett 93:162508
5. Lepine DJ (1970) Spin resonance of localized and delocalized electrons in phosphorus-doped silicon between 20 and 30 degrees K. Phys Rev B 2:24292439
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