Effect of Annealing at Argon Pressure Up to 1.2 GPa on Hydrogen — Plasma Etched and Hydrogen — Implanted Single — Crystalline Silicon-Reference-Cited by-同舟云学术

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Effect of Annealing at Argon Pressure Up to 1.2 GPa on Hydrogen — Plasma Etched and Hydrogen — Implanted Single — Crystalline Silicon

Published:2002 Issue: Volume: Page:441-445
ISSN:
Container-title:Hydrogen Materials Science and Chemistry of Metal Hydrides
language:
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Author:

Misiuk A.,Bk-Misiuk J.,Barcz A.,Romano-Rodriguez A.,Antonova I. V.,Popov V. P.,Londos C. A.,Jun J.

Publisher

Springer Netherlands

Link

http://link.springer.com/content/pdf/10.1007/978-94-010-0558-6_43

Reference10 articles.

1. A.G. Ulyashin, Yu. A. Bumay, R. Job, G. Grabosch, D. Borchert, W.R. Fahrner, A. Yu. Diduk, Solid State Phenomena, 57-58 (1997) 189.

2. Y. Tokuda, A. Ito, H. Ohshima, Semicond.Sci.Technol., 13 (1997) 194.

3. X. Lu, N.W. Cheung, M.D. Strathman, P.K. Chu, B. Doyle, Appl.Phys.Lett., 71 (1997) 1804.

4. B. Surma, A. Misiuk, J. Jun, M. Rozental, A. Wnuk, A.G. Ulyashin, I.V. Antonova, V.P. Popov, R. Job, Proceed. ASDAM′98, Smolenice, Slovakia 1998, J. Breza, D. Donoval, V. Drobny, F. Uherek, Eds, p. 47 (1998).

5. A. Misiuk, P. Zaumseil, Electrochem.Soc.Proceed., 95-30 (1995) 194.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Effect of Germanium Doping on the Production of Carbon–Related Defects in Electron-Irradiated Czochralski Silicon;Solid State Phenomena;2009-10

2. Effect of External Stress at Annealing on Microstructure of Silicon Co-Implanted with Hydrogen and Helium;Solid State Phenomena;2003-09

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