Author:
Kessler P., ,Lorenz K.,Miranda S. M. C.,Correia J. G.,Johnston K.,Vianden R.
Reference8 articles.
1. Shigefusa, F., et al.: Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors. Nat. Mater. 5, 810–816 (2006)
2. Siegbahn, K. (ed.): Alpha-, Beta-, and Gamma-ray Spectroscopy. North-Holland Publishing Company, Amsterdam (1965)
3. Lorenz, K., Ruske, F., Vianden, R.: Reversible changes in the lattice site structure for In implanted into GaN. Appl. Phys. Lett. 80(24), 4531–4533 (2002)
4. Lorenz, K., Geruschke, T., Alves, E., Vianden, R.: Temperature dependence of the electric field gradient in GaN measured with the PAC-probe 181Hf. Hyp. Int. 177(1–3), 89–95 (2007)
5. Schmitz, J., Penner, J., Lorenz, K., Alves, E., Vianden, R.: Temperature dependent site change of In in AlN and GaN. Phys. Status Solidi A 205, 93–95 (2008)